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  bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 1 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 npn silicon planar medium power transistors in sot223 features ? i c = 1a continuous collector current ? low saturation voltage v ce(sat) < 500mv @ 0.5a ? gain groups 10 and 16 ? epitaxial planar die construction ? complementary pnp types: bcp51, 52 and 53 ? lead-free, rohs compliant (note 1) ? halogen and antimony free. ?green? devices (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot223 ? case material: molded plastic, ?green? molding compound (note 2) ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.112 grams (approximate) applications ? medium power switching or amplification applications ? af driver and output stages ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel bcp54ta bcp 54 7 12 1,000 bcp5410ta bcp 5410 7 12 1,000 bcp5416ta bcp 5416 7 12 1,000 BCP55TA bcp 55 7 12 1,000 bcp5510ta bcp 5510 7 12 1,000 bcp5516ta bcp 5516 7 12 1,000 bcp56ta bcp 56 7 12 1,000 bcp5610ta bcp 5610 7 12 1,000 bcp5616ta bcp 5616 7 12 1,000 bcp5616tc bcp 5616 13 12 4,000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website http://www.diodes.com marking information c e b bcp = product type marking code, line 1. xxxx = product type marking code, line 2 as follows: bcp54 = 54 bcp55 = 55 bcp56 = 56 bcp5410 = 5410 bcp5510 = 5510 bcp5610 = 5610 bcp5416 = 5416 bcp5516 = 5516 bcp5616 = 5616 top view device symbol sot223 top view pin-out c c b e xxxx bcp
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 2 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 maximum ratings @ t a = 25c unless otherwise specified characteristic symbol bcp54 bcp55 bcp56 unit collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5 v continuous collector current i c 1 a peak pulse collector current i cm 2 continuous base current i b 100 ma peak pulse base current i bm 200 thermal characteristics @ t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 2 w thermal resistance, junction to ambient (note 4) r ja 62 q c/w  thermal resistance, junction to leads (note 5) r jl 19.4 q c/w  operating and storage temperature range t j, t stg -65 to +150 q c notes: 4. for a device surface mounted on 50mm x 50mm fr4 pcb with high coverage of single sided 1 oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 5. thermal resistance from junction to solder-point (at the end of the collector lead).
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 3 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 thermal characteristics 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 50mm x 50mm 1oz cu derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 50mm x 50mm 1oz cu t amb = 25c pulse power dissipation pulse width (s) transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 50mm x 50mm 1oz cu t amb = 25c single pulse maximum power (w)
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 4 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 electrical characteristics @ t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bcp54 bv cbo 45 - - v i c = 100a bcp55 60 bcp56 100 collector-emitter breakdown voltage (note 6) bcp54 bv ceo 45 - - v i c = 10ma bcp55 60 bcp56 80 emitter-base breakdown voltage bv ebo 5 - - v i e = 10a collector cut-off current i cbo - - 0.1 20 a v cb = 30v v cb = 30v, t a = 150c emitter cut-off current i ebo - - 20 na v eb = 4v static forward current transfer ratio (note 6) all versions h fe 25 40 25 - - - - 250 - i c = 5ma, v ce = 2v i c = 150ma, v ce = 2v i c = 500ma, v ce = 2v 10 gain grp 63 - 160 i c = 150ma, v ce = 2v 16 gain grp 100 - 250 i c = 150ma, v ce = 2v collector-emitter saturation voltage (note 6) v ce ( sat ) - - 0.5 v i c = 500ma, i b = 50ma base-emitter turn-on voltage (note 6) v be ( on ) - - 1.0 v i c = 500ma, v ce = 2v transition frequency f t 150 - - mhz i c = 50ma, v ce = 10v f = 100mhz output capacitance c obo - - 25 pf v cb = 10v, f = 1mhz notes: 6. measured under pulsed conditions. pulse width 300s. duty cycle 2%. 0 0.2 0.4 0.6 0.8 012345 v , collector-emitter voltage (v) ce i, c o lle c t o r c u r r e n t (a) c fig. 1 typical collector current vs. collector-emitter voltage h , dc current gain fe fig. 2 typical dc current gain vs. collector current 0 50 100 150 200 250 0.001 0.01 0.1 110 i , collector current (a) c
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 5 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 i , collector current (a) c v , base-emitter turn-on voltage (v) be(on) fig. 3 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.2 0.0001 0.001 0.01 0.1 1 10 1.0 i , collector current (a) c v , collector-emitter saturation ce(sat) voltage (v) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.1 0.2 0.3 0.4 0.0001 0.001 0.01 0.1 1 10 i , collector current (a) c v , base-emitter saturation voltage (v) be(sat) fig. 5 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 capacitance (pf) v , reverse voltage (v) r fig. 6 typical capacitance characteristics 0 20 40 60 80 100 120 140 0.1 1 10 100 i , collector current (ma) c f , gain-bandwidth product (mhz) t fig. 7 typical gain-bandwidth product vs. collector current 0 50 100 150 200 250 300 020406080100 v = 5v f = 100mhz ce
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 6 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 package outline dimensions suggested pad layout sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm dimensions value (in mm) x1 3.3 x2 1.2 y1 1.6 y2 1.6 c1 6.4 c2 2.3 a1 a x2 c1 c2 x1 y2 y1
bcp 54 / 55 / 56 datasheet number: ds35367 rev. 2 ? 2 7 of 7 www.diodes.com june 2011 ? diodes incorporated bcp 54 / 55 / 56 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com


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